DataSheet.es    

Datasheet P4NB80FP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P4NB80FPSTP4NB80FP

® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
STMicroelectronics
STMicroelectronics
data


P4N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P4N05L RFP4N05L

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regula
Intersil Corporation
Intersil Corporation
datasheet P4N05L pdf
2P4N60SSP4N60

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P4N60 pdf
3P4N80E MTP4N80E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performa
Motorola Semiconductors
Motorola Semiconductors
datasheet P4N80E pdf
4P4NA40F1 STP4NA40F1

STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 2Ω < 2Ω ID 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTR
ST Microelectronics
ST Microelectronics
datasheet P4NA40F1 pdf
5P4NA60FISTP4NA60FI

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 2.2 Ω < 2.2 Ω ID 4.3 A 2.7 A TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE A
STMicroelectronics
STMicroelectronics
datasheet P4NA60FI pdf
6P4NA80 STP4NA80 N-Channel MOS Transistor

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) <3Ω <3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA
ST Microelectronics
ST Microelectronics
datasheet P4NA80 pdf
7P4NA80FI STP4NA80FI

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED R
ST Microelectronics
ST Microelectronics
datasheet P4NA80FI pdf



Esta página es del resultado de búsqueda del P4NB80FP. Si pulsa el resultado de búsqueda de P4NB80FP se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap