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Datasheet P3NB80FP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P3NB80FP STP3NB80FP

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH d
ST Microelectronics
ST Microelectronics
data


P3N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P3N60FIMTP3N60FI

MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP
ETC
ETC
datasheet P3N60FI pdf
2P3N90FI STP3N90FI

ST Microelectronics
ST Microelectronics
datasheet P3N90FI pdf
3P3NA50STP3NA50

STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA50 STP3NA50FI VDSS 500 V 500 V RDS(on) <3Ω <3Ω ID 3.3 A 2.3 A s TYPICAL RDS(on) = 2.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC
STMicroelectronics
STMicroelectronics
datasheet P3NA50 pdf
4P3NA60STP3NA60

STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI VDSS 600 V 600 V RDS(on) <4Ω <4Ω ID 2.9 A 2.1 A s TYPICAL RDS(on) = 3.3 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC
STMicroelectronics
STMicroelectronics
datasheet P3NA60 pdf
5P3NA80FISTP3NA80FI

STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA80 STP3NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 4.5 Ω < 4.5 Ω ID 3.1 A 2A TYPICAL RDS(on) = 3.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALA
STMicroelectronics
STMicroelectronics
datasheet P3NA80FI pdf
6P3NA90FISTP3NA90FI

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P3NA 90 ST P3NA 90FI VDSS 900 V 900 V RDS(o n) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DA
STMicroelectronics
STMicroelectronics
datasheet P3NA90FI pdf
7P3NB60FPSTP3NB60

m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.6 Ω < 3.6 Ω 3.3 A 2.2 A s s s s s TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
ST Microelectronics
ST Microelectronics
datasheet P3NB60FP pdf



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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