Datasheet NX7661JB-BC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NX7661JB-BC	InGaAsP MQW FP PULSED LASER DIODE NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) FEATURES • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 1625 nm • INTERNAL THERMOELECTRIC COOLE	CEL

NX7661JB Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NX7661JB-BC	InGaAsP MQW FP PULSED LASER DIODE NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) FEATURES • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 1625 nm • INTERNAL	CEL

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