Datasheet NTE2732A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NTE2732A	Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5	NTE

NTE27 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NTE2764	Integrated Circuit NMOS / 64K Erasable EPROM / 200ns NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it id	NTE
NTE276	Silicon Controlled Rectifier NTE276 Silicon Controlled Rectifier (SCR) Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings	NTE Electronics
NTE2732A	Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing	NTE

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