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NEC NE8500295-6
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Datasheet NE8500295-6 Equivalent ( PDF )

P/N Descripción Fabr. PDF
NE8500295-6 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GH- frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incor
NEC NEC NE8500295-6 datasheet



NE85 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N Descripción Fabr. PDF
NE85001 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC datasheet NE85001 pdf
NE8500100 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC datasheet NE8500100 pdf
NE8500199 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC datasheet NE8500199 pdf
NE85002 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC datasheet NE85002 pdf
NE8500200 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC datasheet NE8500200 pdf
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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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