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NE8500295-6 PDF File ( Datasheet )

NEC
NE8500295-6
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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NE8500295-6 Description
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GH- frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device ha

NEC
NEC




Related Part Number

NE85633  |  NE88935  

NE8500199  |  NE851M33  

NE85632  |  NE856M13  



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