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Datasheet NE3512S02 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package
APPLICATIONS
• C to Ku- |
CEL |
NE3512 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
CEL |
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Número de pieza | Descripción | Fabricantes | |
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