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Datasheet MTP55N06Z Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MTP55N06Z   TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch effi
Motorola Semiconductors
Motorola Semiconductors
datasheet MTP55N06Z pdf

MTP55N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MTP55N06Z

TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche
Motorola Semiconductors
Motorola Semiconductors
datasheet pdf - Motorola Semiconductors


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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