Datasheet MTP3N60FI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTP3N60FI	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CH	ST Microelectronics

MTP3N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTP3N60	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP	ST Microelectronics
MTP3N60	(MTP3N55) Power Field Effect Transistor	Motorola Semiconductors
MTP3N60FI	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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