Datasheet MTP3N50E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTP3N50E	TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in t	Motorola Semiconductors

MTP3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTP3N60	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP	ST Microelectronics
MTP3N60	(MTP3N55) Power Field Effect Transistor	Motorola Semiconductors
MTP3N60FI	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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