Datasheet MTP3N120E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTP3N120E	TMOS POWER FET 3.0 AMPERES 1000 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the aval	Motorola Semiconductors

MTP3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTP3N120E	TMOS POWER FET 3.0 AMPERES 1000 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand hig	Motorola Semiconductors
MTP3N100E	TMOS POWER FET 3.0 AMPERES 1000 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate ™ Data Sheet MTP3N100E Motorola Preferred Device This high voltage MOSFET u	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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