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Datasheet MT45W2MW16B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MT45W2MW16B | (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst |
 Micron Semiconductor |
 |
| 1 | MT45W2MW16BFB | (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst |
Micron Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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