Datasheet MSC0211GE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSC0211GE	Dual N-Channel Enhancement Mode Power MOS FET MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD prot	MORESEMI

MSC021 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSC0211GE	Dual N-Channel Enhancement Mode Power MOS FET MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount	MORESEMI

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Número de pieza	Descripción	Fabricantes	PDF
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