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Datasheet MJE8503 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MJE8503 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min) ·High Switching Speed
APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly |
 Inchange Semiconductor |
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| 3 | MJE8503 | POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE™ Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall t |
 Motorola Semiconductors |
|
| 2 | MJE8503 | NPN BIPOLAR POWER TRANSISTORS |
 New Jersey Semiconductor |
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| 1 | MJE8503A | POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE™ Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall t |
Motorola Semiconductors |
|
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