MJE8503 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATING

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A, D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Series NPN Bipolar Power Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Featuring 1500 V