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Datasheet MJE15030 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| MJE15030 | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeters
Electrical Characteristics (Ta=25oC)
Part #
Polarity VCBO VCEO VEBO (V) (V) (V)
Min Min Min
PD (W)
IC (A)
ICES @ VCE hFE hFE @ IC (uA) (A)
Max Min Max
VCE (V)
VCE
(SAT)
(V) Max
VBE
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| NPN Transistor MJE15028 MJE15030 NPN MJE15029 MJE15031 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE15028, MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Volta
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| 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE15028, D
Complementary Silicon Plastic Power Transistors
. . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc
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| Complementary Silicon Plastic Power Transistors MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
Complementary Silicon Plastic Power Transistors
These devices are designed for use as high frequency drivers in audio amplifiers.
Features
High Current Gain Bandwidth Product TO 220 Compact Package These Devices are Pb Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage MJE15028G, MJE15029G MJ
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| POWER TRANSISTORS(8.0A /120-150V /50W) A
A
A
A
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MJE1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| MJE1123 | PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS
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| MJE122 | COMPLEMENTARY SILICON POWER DARLINGTONS
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| MJE127 | COMPLEMENTARY SILICON POWER DARLINGTONS
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| MJE13002 | POWER TRANSISTORS ( 1.5A / 300V / 40W )
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| MJE13002A | SILICON NPN TRIPLE DIFFUSED MESA TYPE
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| MJ1101 | Copy and Printer
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| MJE15029 | Bipolar Transistor
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| Esta página es del resultado de búsqueda del MJE15030. Si pulsa el resultado de búsqueda de MJE15030 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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