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Datasheet MIT-4A11B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MIT-4A11B | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
MIT-4A11B
Package Dimensions
Unit : mm
2
C
E
3
1
A `4.2
C
|  Unity Opto Technology | data |
MIT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MIT-4A11 | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
1 2
MIT-4A11A
Package Dimensions
C E
3
Unit : mm
A
4.2
C
4
5 Unity Opto Technology  | ||
| 2 | MIT-4A11A | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
1 2
MIT-4A11A
Package Dimensions
C E
3
Unit : mm
A
4.2
C
4
5 Unity Opto Technology | ||
| 3 | MIT-4A11B | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
MIT-4A11B
Package Dimensions
Unit : mm
2
C
E
3
1
A `4.2
C
Unity Opto Technology | ||
| 4 | MIT-5A116 | SLOTTED PHOTOINTERRUPTER SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
2 14.0 (.551) 0.5 ± 0.10 (.020) A 5.0 ± 0.2 (.197) 1
MIT-5A116
Package Unity Opto Technology | ||
| 5 | MIT-5A116-U | SLOTTED PHOTOINTERRUPTER SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
2 14.00(.551) 0.50 ± 0.10 (.020±.004) 5.00± 0.20 B A (.197±.008) 1
Unity Opto Technology | ||
| 6 | MIT-5A117 | SLOTTED PHOTOINTERRUPTER SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.
22 3 1
MIT-5A117
Package Dimensions
Unit: mm ( inches )
4
13.0 6.2 (.244) Unity Opto Technology | ||
| 7 | MIT-5A11B | SLOTTED PHOTOINTERRUPTER SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
2 1 11.00 (.433) 7.00 (.276)
MIT-5A11B
Package Dimensions
13.00 (.512)
Unity Opto Technology |
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