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Datasheet MFQ960C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MFQ960C | QUAD DUAL-IN-LINE TMOS MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATINGS
Rating
Symbol MFQ930C MFQ960C MFQ990C
CASE 632-02, STYLE 1
TO-116
QUAD
DUAL-IN-LINE
TMOS
N-CHANNEL — ENHANCEMENT
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Diss |  Motorola Semiconductors | data |
MFQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MFQ1000 | (MFQxxx P/C) Quad TMOS FETS Motorola Semiconductors  | ||
| 2 | MFQ107 | QUAD DUAL IN LINE TMOS MFQ107
CASE 646-05, STYLE I QUAD
DUAL IN LINE
TMOS
N-CHANNEL - ENHANCEMENT
Refer to MFE9200 for graphs
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current
Total Device Dissipation
@TA = 25°C(1)
Derate above 25 °C Operating and Storage
Junction Temperat Motorola Semiconductors | ||
| 3 | MFQ6660 | (MFQxxx P/C) Quad TMOS FETS Motorola Semiconductors | ||
| 4 | MFQ930 | (MFQxxx P/C) Quad TMOS FETS Motorola Semiconductors | ||
| 5 | MFQ930C | QUAD DUAL-IN-LINE TMOS MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATINGS
Rating
Symbol MFQ930C MFQ960C MFQ990C
CASE 632-02, STYLE 1
TO-116
QUAD
DUAL-IN-LINE
TMOS
N-CHANNEL — ENHANCEMENT
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Diss Motorola Semiconductors | ||
| 6 | MFQ960 | (MFQxxx P/C) Quad TMOS FETS Motorola Semiconductors | ||
| 7 | MFQ960C | QUAD DUAL-IN-LINE TMOS MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATINGS
Rating
Symbol MFQ930C MFQ960C MFQ990C
CASE 632-02, STYLE 1
TO-116
QUAD
DUAL-IN-LINE
TMOS
N-CHANNEL — ENHANCEMENT
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Diss Motorola Semiconductors |
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