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Datasheet LT7N60A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LT7N60A | N-channel MOSFET Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of |  Longtium Microelectronics | mosfet |
LT7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LT73 | Thermal Sensor THERMAL SENSOR
m o .c LT73 U 4 t e e h S a at .D w w w
Linear Positive Temp. Coefficient Flat Chip Resistors
m o .c U 4 t e e h S a t a .D w w w
m o .c U 4 t e e h S a at .D w w w
www.koanet.co.jp
www.koanet.co.jp
 KOA sensor | | |
| 2 | LT73 | Thermal Sensor / Circuit Protectors TECHNOLOGY OF TOMORROW
m o THERMAL SENSORS .c LINEAR PTC, THIN FILM 4U t LT 73 e e h S a at .D IDENTIFICATION w w w
PRODUCT CODE LT73
THERMAL SENSORS / CIRCUIT PROTECTORS
STRUCTURE
1 2 3 4 5 6 7 8 MARKING Black, 4 digits Products with Pb-free terminations meet RoHS requirements Ceramic substrate KOA sensor | | |
| 3 | LT770D | GREEN OVAL LAMP LED SPECIFICATIONS
MODEL PART NO.
GREEN OVAL LAMP LED LT770D
[Contents] 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Devices -------------------------------------------------Outline Dimensions ----------------------------------Absolute Maximum Ratings ------------------------Electro-Optical  Seoul Semiconductor led | | |
| 4 | LT7N60 | N-channel MOSFET Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of Longtium Microelectronics mosfet | | |
| 5 | LT7N60A | N-channel MOSFET Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of Longtium Microelectronics mosfet | |
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