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Datasheet K4N29 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K4N29 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N29 • K4N29A
DIMENSION
7.62 6 5 4
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.
(Unit : mm)
0.25
6.4
FEATURES
• Small Package Size • Collector-Emitter Voltage : Min.30V • Current |  KODENSHI KOREA CORP | data |
| 2 | K4N29A | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N29 • K4N29A
DIMENSION
7.62 6 5 4
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.
(Unit : mm)
0.25
6.4
FEATURES
• Small Package Size • Collector-Emitter Voltage : Min.30V • Current | KODENSHI KOREA CORP | data |
K4N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K4N25 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio KODENSHI KOREA CORP data | | |
| 2 | K4N25A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio KODENSHI KOREA CORP data | | |
| 3 | K4N25G | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra KODENSHI KOREA CORP data | | |
| 4 | K4N25H | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra KODENSHI KOREA CORP data | | |
| 5 | K4N26 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N26
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62
(Unit : mm)
0.25
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% KODENSHI KOREA CORP data | | |
| 6 | K4N26323AE-GC | 128Mbit GDDR2 SDRAM K4N26323AE-GC
128M GDDR2 SDRAM
128Mbit GDDR2 SDRAM
1M x 32Bit x 4 Banks GDDR2 SDRAM
with Differential Data Strobe and DLL
Revision 1.7 January 2003
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.7 (Jan. 2003)
K4N26323AE-GC
128M GDDR2 SDR  Samsung data | | |
| 7 | K4N27 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N27
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% KODENSHI KOREA CORP data | | |
| 8 | K4N28 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N28
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% KODENSHI KOREA CORP data | | |
| 9 | K4N29 | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N29 • K4N29A
DIMENSION
7.62 6 5 4
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.
(Unit : mm)
0.25
6.4
FEATURES
• Small Package Size • Collector-Emitter Voltage : Min.30V • Current KODENSHI KOREA CORP data | |
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