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Datasheet K4M563233E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233E - M(E)E/N/G/C/L/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, |
Samsung semiconductor |
K4M5632 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4M563233G | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung semiconductor |
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K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung semiconductor |
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K4M56323PG-C | 2M x 32Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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