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Datasheet JDV2S19S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1JDV2S19SVCO

JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band • • • High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characterist
Toshiba
Toshiba
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JDV Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1JDV2S01EVCO for UHF band

JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.5 Ω (typ.) · · · Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperat
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S01E pdf
2JDV2S01STOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S01S pdf
3JDV2S02EVCO for UHF band

JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.) · · · Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage tempera
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S02E pdf
4JDV2S05EVCO

JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • • • Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S05E pdf
5JDV2S07SVCO for UHF Band Radio

JDV2S07S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reve
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S07S pdf
6JDV2S08SVCO for UHF Band Radio

JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reve
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S08S pdf
7JDV2S10FSSilicon Epitaxial Planar Type VCO

JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10FS VCO for the UHF band • • • High capacitance ratio: C0.5V/C2.5V =2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. カソードマーク Unit: mm
Toshiba Semiconductor
Toshiba Semiconductor
datasheet JDV2S10FS pdf



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