Datasheet JANSR2N7261 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	JANSR2N7261	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR PD - 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si)	International Rectifier

JANSR2N7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
JANSR2N7389	TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.882A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHF9130 JANSR2N7389 RAD HARD [REF: MIL-PRF-19500/630] P-CHANNEL -100 Volt, 0.30Ω , RAD HARD HEXFET International Rectifier’s P-Channel	International Rectifier
JANSR2N7391	TRANSISTOR N-CHANNEL(BVdss=400V/ Rds(on)=0.20ohm/ Id=22A) Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 400 Volt, 0.20 Ω, (SEE) RAD HARD HEXFET In	International Rectifier
JANSR2N7423	RADIATION HARDENED POWER MOSFET PD-91299E RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® I	IRF

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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