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PDF JANSR2N7389 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7389 | |
| Descripción | TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.882A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHF9130
HEXFET® TRANSISTOR
JANSR2N7389
[REF: MIL-PRF-19500/630]
P-CHANNEL
RAD HARD
-100 Volt, 0.30Ω, RAD HARD HEXFET
Product Summary
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of Inter-
national Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the RAD
HARD process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest qual-
ity and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Part Number
IRHF9130
BV DSS
-100V
RDS(on)
0.30 Ω
ID
-6.5A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRHF9130
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1 A
-26
25 W
0.2 W/K
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20 V
165 mJ
-6.5 A
2.5 mJ
-5.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in (1.6 mm) from case for 10 sec.)
oC
Weight
0.98 (typical)
g
To Order
1 page | ||
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| PDF Descargar | [ Datasheet JANSR2N7389.PDF ] | |
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