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Datasheet J13009 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1J13009 FJP13009

FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emit
Fairchild Semiconductor
Fairchild Semiconductor
data


J13 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1J13003Mini Size Discrete Semiconductor Elements

Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF ( low capacitance ) & Varactor SOT-323 SOT-23 TO-25
Sinyork
Sinyork
datasheet J13003 pdf
2J13009 FJP13009

FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emit
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J13009 pdf
3J132MOS FIELD EFFECT POWER TRANSISTORS

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is
NEC
NEC
datasheet J132 pdf
4J132-ZMOS FIELD EFFECT POWER TRANSISTORS

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is
NEC
NEC
datasheet J132-Z pdf
5J133MOS FET

ETC
ETC
datasheet J133 pdf
6J133P-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is
NEC
NEC
datasheet J133 pdf
7J133-ZMOS FET

ETC
ETC
datasheet J133-Z pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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