Datasheet IXTH50N25T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH50N25T	Trench Gate Power MOSFET Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode TO-263 (IXTA) IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = RDS(on) ≤ 250V 50A 50mΩ TO-247 (IXTH) TO-220 (IXTP) G S (TAB) G D S (TAB) G DS (TAB) Symbol VDSS VDGR VGSM ID25 IDM IAS E	IXYS

IXTH50N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH50N20	MegaMOS FET MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Trans	IXYS Corporation
IXTH50N25T	Trench Gate Power MOSFET Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode TO-263 (IXTA) IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = RDS(on) ≤ 250V 50A 50mΩ TO-247 (IXTH) TO-220 (IXTP) G S (TAB) G D S (TAB) G DS (TAB) Symbol VDSS VDGR	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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