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Datasheet IXKC13N80C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXKC13N80C | CoolMOS Power MOSFET
ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET
IXKC 13N80C
VDSS = 800 V ID25 = 13 A RDS(on) = 290 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Ts |  IXYS Corporation | mosfet |
IXK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | IXKC13N80C | CoolMOS Power MOSFET
ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET
IXKC 13N80C
VDSS = 800 V ID25 = 13 A RDS(on) = 290 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Ts IXYS Corporation  | ||
| 2 | IXKC15N60C5 | Power MOSFET, Transistor Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
D
G S
ID25 = 15 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
ISOPLUS220TM
G D S
E72873
 IXYS | ||
| 3 | IXKC20N60C | CoolMOS Power MOSFET
CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Preliminary Data Sheet
VDSS = 600 V ID25 = 14 A RDS(on) = 190 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tst IXYS Corporation | ||
| 4 | IXKC25N80C | Power MOSFET ISOPLUS220
Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet
Symbol VDSS VGS VGSM ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to IXYS | ||
| 5 | IXKC40N60C | CoolMOS Power MOSFET
ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET
IXKC 40N60C
VDSS = 600 V ID25 = 28 A RDS(on) = 96 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL IXYS Corporation | ||
| 6 | IXKF40N60SCD1 | CoolMOS Power MOSFET
Advanced Technical Information
IXKF 40N60SCD1 ID25 VDSS RDSon trr = 38 A = 600 V = 60 mΩ = 70 ns
CoolMOS Power MOSFET
with Series Schottky Diode and Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PACTM
MOSFET T Symbol VDSS VGS ID25 ID90 Symbol TC = 25°C TC = 90° IXYS Corporation | ||
| 7 | IXKG25N80C | CoolMOS Power MOSFET ISO264
ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET
VDSS = 800 V ID25 = 25 A RDS(on) = 150 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg IXYS Corporation |
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