Datasheet IXFP3N80 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFP3N80	(IXFA3N80 / IXFP3N80) HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test	IXYS Corporation

IXFP3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFP3N120	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-22	IXYS Corporation
IXFP34N65X2	Power MOSFET ( Transistor ) X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150�	IXYS
IXFP3N80	(IXFA3N80 / IXFP3N80) HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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