Datasheet IXFN36N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN36N60	HiPerFET Power MOSFET IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 IXFN 36N60 ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns VDSS HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA (IXFK) Symbol VDSS	IXYS

IXFN36 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN360N15T2	GigaMOS TrenchT2 HiperFET Power MOSFET Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T2 RDS(on) ≤ ≤ trr VDSS ID25 = = 150V 310A 4.0mΩ 150ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RM	IXYS Corporation
IXFN36N100	HiPerFET Power MOSFETs Single Die MOSFET HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25	ETC
IXFN360N10T	GigaMOS Trench HiperFET Power MOSFET GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 360A 2.6mΩ 130ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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