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PDF IXFN360N10T Data sheet ( Hoja de datos )
| Número de pieza | IXFN360N10T | |
| Descripción | GigaMOS Trench HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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GigaMOSTM Trench
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFN360N10T
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
PD TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 Minute
t = 1 Second
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M Mounting Torqued
Terminal Connection Torque
Weight
Maximum Ratings
100
100
V
V
±20 V
±30 V
360 A
200 A
900 A
100 A
3J
830 W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 3mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
Characteristic Values
Min. Typ . Max.
100 V
2.5 4.5 V
±200 nA
25 μA
2.5 mA
2.6 mΩ
VDSS
ID25
=
=
≤RDS(on)
trr ≤
100V
360A
2.6mΩ
130ns
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100088A(10/09)
1 page  
IXFN360N10T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
320
RG = 1Ω , VGS = 10V
280 VDS = 50V
240 I D = 200A
200
160
120 I D = 100A
80
40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700 210
t r td(on) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 50V
500
I D = 200A
180
150
400 120
I D = 100A
300 90
200 60
100 30
0
123456789
RG - Ohms
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Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
400
350 t f
td(off) - - - -
RG = 1Ω, VGS = 10V
300 VDS = 50V
0
10
140
130
120
250
200 TJ = 125ºC
110
100
150
TJ = 25ºC
100
90
80
50 70
0 60
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
280
RG = 1Ω , VGS = 10V
240 VDS = 50V
200 TJ = 125ºC
160 TJ = 25ºC
120
80
40
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
400
t f td(off) - - - -
350 RG = 1Ω, VGS = 10V
VDS = 50V
300
120
110
100
250
I D = 200A
200
150
I D = 100A
90
80
70
100 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
700 650
t f td(off) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 50V
500
550
450
400 I D = 200A
300
200
I D = 100A
350
250
150
100 50
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFN360N10T.PDF ] | |
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