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Datasheet IXFK50N50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IXFK50N50(IXFx5xN50) HiPerFET Power MOSFET

HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS ID25 55A 50A 55A 50A RDS(on) 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns IXFN IXFN IXFK IXFK 55N50 50N50 55N50 50N50 500V 500V 500V 500V IXFK 55N50 500 500 ± 20 ±
IXYS Corporation
IXYS Corporation
mosfet


IXF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1IXF1810210Gbps Physical Layer Device

product brief Intel IXF18102 ® 10Gbps Physical Layer Device for STS-192c/STM 64c POS/GFP www.datasheet4u.com Product Description The Intel® IXF18102 is a highly integrated framer solution for STS-192c/STM 64c port applications. The IXF18102 supports various modes of operation for transport of H
Intel Corporation
Intel Corporation
datasheet IXF18102 pdf
2IXF1810410 Gigabit Lan PHY

product brief Intel IXF18104 ® 10 Gigabit LAN PHY www.datasheet4u.com Product Overview The Intel® IXF18104 is a highly integrated solution for 10GbE Local Area Network (LAN) port applications compliant as per IEEE802.3ae specifications. The IXF18104 supports the 10GbE LAN mode of operation for
Intel Corporation
Intel Corporation
datasheet IXF18104 pdf
3IXFA102N15TPower MOSFET, Transistor

Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.DataShee
IXYS Corporation
IXYS Corporation
datasheet IXFA102N15T pdf
4IXFA10N60PPolar MOSFETs

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Ts
IXYS Corporation
IXYS Corporation
datasheet IXFA10N60P pdf
5IXFA10N80PPower MOSFET, Transistor

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS
IXYS Corporation
IXYS Corporation
datasheet IXFA10N80P pdf
6IXFA110N15T2Power MOSFET, Transistor

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA110N15T2 IXFP110N15T2 VDSS ID25 RDS(on) = 150V = 110A ≤ 13mΩ TO-263 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test
IXYS Corporation
IXYS Corporation
datasheet IXFA110N15T2 pdf
7IXFA12N50PPolar MOSFETs

Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg
IXYS Corporation
IXYS Corporation
datasheet IXFA12N50P pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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