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Datasheet IXFH40N30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXFH40N30 | (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching w
w
w
.d
e e h s a t a
. u t4
m o c
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 IXYS Corporation |
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| 3 | IXFH40N30 | HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 300 V 300 V 300 V
ID25
RDS(on)
35 A 100 mW 40 A 85 mW 40 A 88 mW
trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg
Test Conditions |
IXYS Corporation |
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| 2 | IXFH40N30Q | Power MOSFETs HiPerFETTM Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q IXFT40N30Q
VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150 |
 IXYS |
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| 1 | IXFH40N30Q | HiPerFET Power MOSFETs Q-Class HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 40N30Q IXFT 40N30Q
VDSS ID25
RDS(on)
trr
= 300 V = 40 A = 80 mW £ 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Condition |
 ETC |
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