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PDF IXFH40N30Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH40N30Q | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q
IXFT40N30Q
VDSS = 300V
ID25 = 40A
≤RDS(on) 85mΩ
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
300
300
± 20
± 30
40
160
40
1.0
V
V
V
V
A
A
A
J
5
300
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
300 V
2.0 4.0 V
±100 nA
25 μA
1 mA
85 mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
G DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Low Intrinsic Gate Resistance
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS98504C(03/11)
1 page  
IXFH40N30Q
IXFT40N30Q
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
0.1
1
10
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_40N30Q(7XQ)03-22-11-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFH40N30Q.PDF ] | |
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