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Datasheet IRLL110 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| IRLL110 | Power MOSFET, Transistor PD - 90869A
IRLL110
HEXFET® Power MOSFET
l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching
D
VDSS = 100V RDS(on) = 0.54Ω
G S
ID = 1.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ru
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| Power MOSFET, Transistor www.vishay.com
IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.0 V
6.1 2.6 3.3 Single
0.54
D
SOT-223 D
S D G
Marking code: LB
G
S N-Channel MOSFET
FEATURES
Surface mount
Available in tape and reel
Dynamic dV, dt rating
Repetitive avalanche rated
Logic-level gate drive
RDS(on) specif
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| IRLL110PBF | Power MOSFET, Transistor PD - 95222
IRLL110PbF
HEXFET® Power MOSFET
l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching Lead-Free
D
VDSS = 100V RDS(on) = 0.54Ω
G S
ID = 1.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast
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| P/N | Descripción | Fabr. | |
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