Datasheet IRLL024N Equivalent ( PDF ) - MOSFET

PD - 91895 IRLL024N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G S ID = 3.1A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b

PD - 95221 IRLL024NPbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS(on) = 0.065Ω G S ID = 3.1A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

PD-94152 AUTOMOTIVE MOSFET Typical Applications q q q q q IRLL024NQ HEXFET® Power MOSFET D Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats Cruise Control Air Bags Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Dynamic dv, dt Rating Automotive [Q101] Qualified G VDSS = 55V RDS(on) = 0.065Ω