Datasheet IRLL014 Equivalent ( PDF ) - MOSFET

PD - 90866A IRLL014 HEXFET® Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G S ID = 2.7A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggediz

www.vishay.com IRLL014, SiHLL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single 0.20 D SOT-223 D S D G Marking code: LA G S N-Channel MOSFET FEATURES Surface mount Available in tape and reel Dynamic dV, dt rating Logic-level gate drive RDS(on) specified at VGS = 4 V and 5 V Fast

PD- 91499B IRLL014N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This be

PD- 95154 IRLL014NPbF Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

PD - 95387 IRLL014PbF HEXFET® Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G S ID = 2.7A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchi