Datasheet IRFP260 Equivalent ( PDF ) - MOSFET

Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V, ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C,

Power MOSFET IRFP260, SiHFP260 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 230 42 110 Single 0.055 TO-247AC D S D G G S N-Channel MOSFET FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Direct

PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free D VDSS = 200V RDS(on) = 0.04Ω G ID = 50A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements

PD - 95010 IRFP260NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l D VDSS = 200V RDS(on) = 0.04Ω G S ID = 50A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve