IRFP260 PDF File ( Datasheet )

Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V, ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C D (TAB) 28 5 280 -55 ... +150 150 -55 ... +150 G = Gate, S = S

Power MOSFET IRFP260, SiHFP260 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 230 42 110 Single 0.055 TO-247AC D S D G G S N-Channel MOSFET FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay