Datasheet IRFP140 Equivalent ( PDF ) - MOSFET

PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 5.3mΩ ID = 95A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing te

PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating t

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFP140A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 31 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb