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| IRFP1405PBF Description |
| Power MOSFET, Transistor
PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to
International Rectifier |
| Related Part Number |
IRFP245 | IRF7342TRPBF-1 IRFP440A | IRF630PBF IRF7324TRPBF-1 | IRF5801PBF-1 |
| DataSheet.es | 2020 | Contacto |