onsemi IRF730B

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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Datasheet IRF730B Equivalent ( PDF ) - MOSFET

P/N	Descripción	Fabr.	PDF
IRF730B	400V N-Channel MOSFET IRF730B, IRFS730B November 2001 IRF730B, IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avala

IRF7 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N	Descripción	Fabr.	PDF
IRF7457	Power MOSFET( Vdss=20V/ Id=15A )
IRF710	2.0A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
IRF7101	HEXFET Power MOSFET
IRF7103	Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A)
IRF7103Q	Power MOSFET(Vdss=50V)
IRS29831	700V / LED FLYBACK CONTROL IC
IRS2101	HIGH AND LOW SIDE DRIVER

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P/N	Descripción	Fabr.	PDF
2N3904	NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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