Datasheet IRF7103 Equivalent ( PDF ) - MOSFET

PD - 9.1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A 3 6 4 5 Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced proc

IRF7103PbF l l l l l l l l PD -95037A Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A 3 4 6 5 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal ch

PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 VDSS 50V RDS(on) max (mΩ) 130@VGS = 10V 200

PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET P