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Datasheet IRF5803 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| IRF5803 | Power MOSFET(Vdss=-40V) PD-94015
IRF5803
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-40V
RDS(on) max (mΩ)
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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| IRF5803D2 | FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) PD- 94016
IRF5803D2
FETKY MOSFET & Schottky Diode
l l l l l
TM
Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint
A A S G
1
8
K K D D
VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V
2
7
3
6
4
5
Description
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer a
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| IRF5803D2PbF | Power MOSFET & Schottky Diode PD- 95160A
IRF5803D2PbF
l l l l l l
Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free
FETKY MOSFET & Schottky Diode
A A S G
1 8
TM
K K D D
VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V
2
7
3
6
4
5
Description
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes o
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| IRF5803PbF | Power MOSFET, Transistor PD-95262B
IRF5803PbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
D D
VDSS
-40V
RDS(on) max (mW)
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extreme
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IRF5 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| IRF510A | 100V / Advanced Power MOSFET
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| IRF510S | Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=5.6A)
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| IRF520 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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| IRF520A | Advanced Power MOSFET
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| IRF520L | Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)
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| IRS29831 | 700V / LED FLYBACK CONTROL IC
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| IRS2101 | HIGH AND LOW SIDE DRIVER
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| Esta página es del resultado de búsqueda del IRF5803. Si pulsa el resultado de búsqueda de IRF5803 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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