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Datasheet IRF5803 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRF5803 | Power MOSFET(Vdss=-40V) PD-94015
IRF5803
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-40V
RDS(on) max (mΩ)
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET® Power MOSFETs from International Rect |
International Rectifier |
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3 | IRF5803D2 | FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) PD- 94016
IRF5803D2
FETKY MOSFET & Schottky Diode
l l l l l
TM
Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint
A A S G
1
8
K K D D
VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V
2
7 |
International Rectifier |
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2 | IRF5803D2PbF | Power MOSFET & Schottky Diode PD- 95160A
IRF5803D2PbF
l l l l l l
Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free
FETKY MOSFET & Schottky Diode
A A S G
1 8
TM
K K D D
VDSS = -40V RDS(on) = 112mΩ Schottky Vf = |
International Rectifier |
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1 | IRF5803PbF | Power MOSFET ( Transistor ) PD-95262B
IRF5803PbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
D D
VDSS
-40V
RDS(on) max (mW)
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET® Powe |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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