IRF5803 PDF File ( Datasheet )

PD-94015 IRF5803 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -40V RDS(on) max (mΩ) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and l

PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications.