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Datasheet IDT71V2576S133BQI Equivalent ( PDF ) - Ram |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | IDT71V2576S133BQI | 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I, O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
x x
IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA
Features
128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial: 150MH- 3.8ns clock access time 133MH- 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed
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 Integrated Device Technology |
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
|  Infineon Technologies |
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| 2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
|
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
|  Infineon Technologies AG |
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| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| Infineon Technologies AG |
|
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
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| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
|  IDT |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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