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Datasheet IDT71V256SB12Y Equivalent ( PDF ) - Ram |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71V256SB12Y | 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)
Integrated Device Technology, Inc.
IDT71V256SB
FEATURES
Ideal for high-performance processor secondary cache Fast access times: 12, 15, 20ns Inputs are 2.5V and LVTTL compatible: VIH = 1.8V Outputs are LVTTL compatible Low standby current (maximum): 2mA full standby Small packages for space-efficient layouts: 28-pin 300
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![]() Integrated Device Technology |
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| ![]() Infineon Technologies AG |
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4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| ![]() Infineon Technologies AG |
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5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| ![]() IDT |
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Número de pieza | Descripción | Fabricantes | |
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