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Datasheet IDT71P73204 Equivalent ( PDF ) - Ram |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71P73204 | 18Mb Pipelined DDRII SRAM Burst of 4 18Mb Pipelined DDR™II SRAM Burst of 4
Features
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IDT71P73204 IDT71P73104 IDT71P73804 IDT71P73604
Description
The IDT DDRIITM Burst of four SRAMs are high-speed synchronous memories with a double-data-rate (DDR), bidirectional data port. This scheme allows maximization on the bandwidth on the data bus by passing two data items per clock cycle. The address bus operates at less
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| ![]() Infineon Technologies AG |
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4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| ![]() Infineon Technologies AG |
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5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| ![]() IDT |
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Número de pieza | Descripción | Fabricantes | |
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