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Datasheet IDT71F432L75PF Equivalent ( PDF ) - Data |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71F432L75PF | 32k X 32 mcACHE synchronous pipelined cache ram |
![]() Integrated Device Technology |
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| ![]() Infineon Technologies AG |
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4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| ![]() Infineon Technologies AG |
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5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| ![]() IDT |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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