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Datasheet HYB314175BJ-50- Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HYB314175BJ-50- | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60
Preliminary Information
• • • •
262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access tim |
Siemens Semiconductor Group |
HYB314175BJ- Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HYB314175BJ-55 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens Semiconductor Group |
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HYB314175BJ-50- | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens Semiconductor Group |
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HYB314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens Semiconductor Group |
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Número de pieza | Descripción | Fabricantes | |
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