Datasheet HFA9N90 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFA9N90	900V N-Channel MOSFET HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended S	SemiHow

HFA9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFA9N90	900V N-Channel MOSFET HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC	SemiHow
HFA90NH40R	soft recovery diode PD -2.469 rev. B 02/99 HFA90NH40R HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE a d BASE ANODE VR = 400V V F(typ.) = 1V IF(AV) =	International Rectifier
HFA90NH40	Soft Recovery Diode PD -2.468 rev. B 02/99 HFA90NH40 HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE a d BASE CATHODE VR = 400V VF(typ.)= 1V IF(AV) = 90A	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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